PJSEMI MMBTSC3875G

PJSEMI · Transistors (BJTs) · MPN MMBTSC3875G

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Specifications

Current - Collector Cutoff700nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation150mW
Number1 NPN
typeNPN
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))250mV
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 150mW Surface Mount SOT-23

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