PJSEMI MMBT9012H

PJSEMI · Transistors (BJTs) · MPN MMBT9012H

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor PNP 30V 500mA 100MHz 200mW Surface Mount SOT-23

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