PJSEMI 2SB766ASQ-R

PJSEMI · Transistors (BJTs) · MPN 2SB766ASQ-R

4.0/5 from 1 engineer review.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain240
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP 50V 1A 200MHz 0.5W Surface Mount SOT-89

Reviews

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