PJSEMI 13003TE

PJSEMI · Transistors (BJTs) · MPN 13003TE

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO430V
Emitter-Base Voltage VEBO9V
DC Current Gain10
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 430V 1.5A 5MHz 1.25W Surface Mount TO-252

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