PANJIT · FETs & Power MOSFETs · MPN PJX8872B_R1_00001
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| Current - Continuous Drain(Id) | 200mA |
|---|---|
| RDS(on) | 3Ω@10V |
| Pd - Power Dissipation | 300mW |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 34pF |
| Gate Charge(Qg) | 820pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
200mA 3Ω@10V 300mW 2.5V 2 N-Channel SOT-563 FET, MOSFET Arrays RoHS