PANJIT PJW3N10A_R2_00001

PANJIT · FETs & Power MOSFETs · MPN PJW3N10A_R2_00001

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Specifications

Gate Charge(Qg)9.1nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)310mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)508pF

Technical details

100V 2.2A 2.5V 3.1W 310mΩ@10V 1 N-channel SOT-223 Single FETs, MOSFETs RoHS

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