PANJIT · FETs & Power MOSFETs · MPN PJT7812_R1_00001
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| Current - Continuous Drain(Id) | 500mA |
|---|---|
| RDS(on) | 1.2Ω@4.5V |
| Pd - Power Dissipation | 350mW |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Number | - |
| Input Capacitance(Ciss) | 34pF |
| Gate Charge(Qg) | 870pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
500mA 1.2Ω@4.5V 350mW 1.1V SOT-363 FET, MOSFET Arrays RoHS