PANJIT · FETs & Power MOSFETs · MPN PJT7808_R1_00001
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| Current - Continuous Drain(Id) | 500mA |
|---|---|
| RDS(on) | 3Ω@1.2V |
| Pd - Power Dissipation | 350mW |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 67pF |
| Gate Charge(Qg) | 1.4nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 19pF |
500mA 3Ω@1.2V 350mW 900mV 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS