PANJIT · FETs & Power MOSFETs · MPN PJT7801_R1_00001
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| Current - Continuous Drain(Id) | 700mA |
|---|---|
| RDS(on) | 325mΩ@4.5V |
| Pd - Power Dissipation | 350mW |
| Gate Threshold Voltage (Vgs(th)) | 640mV |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 14.7pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 165pF |
| Gate Charge(Qg) | 2.2nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
700mA 325mΩ@4.5V 350mW 640mV 2 P-Channel SOT-363 FET, MOSFET Arrays RoHS