PANJIT PJT7603_R1_00001

PANJIT · FETs & Power MOSFETs · MPN PJT7603_R1_00001

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Specifications

Current - Continuous Drain(Id)400mA
RDS(on)6Ω@4.5V
Pd - Power Dissipation350mW
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)6.6pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)51pF
Gate Charge(Qg)1.1nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)15pF

Technical details

400mA 6Ω@4.5V 350mW 2.5V 1 N-Channel + 1 P-Channel SOT-363 FET, MOSFET Arrays RoHS

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