PANJIT PJT7600_R1_00001

PANJIT · FETs & Power MOSFETs · MPN PJT7600_R1_00001

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Specifications

Current - Continuous Drain(Id)1A
RDS(on)325mΩ@4.5V
Pd - Power Dissipation350mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)9.1pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)151pF
Gate Charge(Qg)2.2nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)27pF

Technical details

N-Channel+P-Channel Array 20V 1A 350mW Surface Mount SOT-363

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