PANJIT PJT7002H_R1_00001

PANJIT · FETs & Power MOSFETs · MPN PJT7002H_R1_00001

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Specifications

Current - Continuous Drain(Id)250mA
RDS(on)-
Pd - Power Dissipation350mW
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)1.7pF
Number2 N-Channel
Input Capacitance(Ciss)22pF
Gate Charge(Qg)1.3nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)12pF

Technical details

250mA 350mW 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS

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