PANJIT PJT138L_R1_00001

PANJIT · FETs & Power MOSFETs · MPN PJT138L_R1_00001

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Specifications

Current - Continuous Drain(Id)200mA
RDS(on)4.2Ω@10V
Pd - Power Dissipation350mW
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)4.2pF
Number-
Input Capacitance(Ciss)15pF
Gate Charge(Qg)700pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)8.4pF

Technical details

200mA 4.2Ω@10V 350mW 1.5V SOT-363 FET, MOSFET Arrays RoHS

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