PANJIT PJS6603_S2_00001

PANJIT · FETs & Power MOSFETs · MPN PJS6603_S2_00001

No reviews yet — be the first to review PANJIT PJS6603_S2_00001.

Specifications

Current - Continuous Drain(Id)4.4A
RDS(on)110mΩ@10V
Pd - Power Dissipation1.25W
Gate Threshold Voltage (Vgs(th))2.1V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)396pF
Gate Charge(Qg)9.8nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)47pF

Technical details

4.4A 110mΩ@10V 1.25W 2.1V 1 N-Channel + 1 P-Channel SOT-23-6 FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs