PANJIT · FETs & Power MOSFETs · MPN PJS6603_S2_00001
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| Current - Continuous Drain(Id) | 4.4A |
|---|---|
| RDS(on) | 110mΩ@10V |
| Pd - Power Dissipation | 1.25W |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 396pF |
| Gate Charge(Qg) | 9.8nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 47pF |
4.4A 110mΩ@10V 1.25W 2.1V 1 N-Channel + 1 P-Channel SOT-23-6 FET, MOSFET Arrays RoHS