PANJIT · FETs & Power MOSFETs · MPN PJS6602_S2_00001
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| Current - Continuous Drain(Id) | 5.2A;3.4A |
|---|---|
| RDS(on) | 36mΩ@4.5V;82mΩ@4.5V |
| Pd - Power Dissipation | 1.25W |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 20V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 396pF;522pF |
| Gate Charge(Qg) | 4.1nC@4.5V;7nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
1.25W 1.2V 1 N-Channel + 1 P-Channel SOT-23-6 FET, MOSFET Arrays RoHS