PANJIT PJS6601_S2_00001

PANJIT · FETs & Power MOSFETs · MPN PJS6601_S2_00001

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Specifications

Current - Continuous Drain(Id)4.1A
RDS(on)100mΩ@4.5V
Pd - Power Dissipation1.25W
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)416pF
Gate Charge(Qg)5.4nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)43pF

Technical details

4.1A 100mΩ@4.5V 1.25W 1.2V 1 N-Channel + 1 P-Channel SOT-23-6 FET, MOSFET Arrays RoHS

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