PANJIT PJQ5606_R2_00001

PANJIT · FETs & Power MOSFETs · MPN PJQ5606_R2_00001

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Specifications

Current - Continuous Drain(Id)25A
Pd - Power Dissipation21W
RDS(on)45mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)76pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)846pF
Gate Charge(Qg)7.8nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)120pF

Technical details

25A 21W 45mΩ@4.5V 2.5V 1 N-Channel + 1 P-Channel DFN5060B-8 FET, MOSFET Arrays RoHS

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