PANJIT PJP60R620E_T0_00001

PANJIT · FETs & Power MOSFETs · MPN PJP60R620E_T0_00001

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Specifications

Configuration-
Drain to Source Voltage600V
Gate Charge(Qg)21nC@10V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)62pF
RDS(on)620mΩ
Number1 N-channel
Input Capacitance(Ciss)457pF

Technical details

600V 4V 620mΩ 1 N-channel TO-220AB Single FETs, MOSFETs RoHS

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