PANJIT · FETs & Power MOSFETs · MPN PJP4NA65H_T0_00001
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| Gate Charge(Qg) | 16.1nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 44W |
| RDS(on) | 3.75Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 423pF |
650V 3A 4V 44W 3.75Ω@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS