PANJIT · FETs & Power MOSFETs · MPN PJMF900N65E1_T0_00001
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25.5W |
| RDS(on) | 900mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 382pF |
650V 4.7A 4V 25.5W 900mΩ@10V 1 N-channel ITO-220AB-F Single FETs, MOSFETs RoHS