PANJIT · FETs & Power MOSFETs · MPN PJMB130N65EC_R2_00601
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| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 235W |
| RDS(on) | 130mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.92nF |
650V 29A 4V 235W 130mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS