PANJIT PJD9N10A_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD9N10A_L2_00001

No reviews yet — be the first to review PANJIT PJD9N10A_L2_00001.

Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.4A;9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W;31W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)152mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.021nF

Technical details

100V 2.5V 152mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs