PANJIT PJD8NA65A_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD8NA65A_L2_00001

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)29nC@10V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.245nF

Technical details

650V 7.5A 4V 140W 1.2Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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