PANJIT PJD85N03_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD85N03_L2_00001

No reviews yet — be the first to review PANJIT PJD85N03_L2_00001.

Specifications

Configuration-
Gate Charge(Qg)23nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)196pF
RDS(on)3.8mΩ
Number1 N-channel
Input Capacitance(Ciss)2.436nF

Technical details

30V 2.5V 58W 3.8mΩ 1 N-channel TO-252 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs