PANJIT · FETs & Power MOSFETs · MPN PJD60R980E_L2_00001
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 14.4nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 58W |
| RDS(on) | 980mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 300pF |
600V 4A 4V 58W 980mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS