PANJIT PJD60R540E_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD60R540E_L2_00001

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)23.7nC@10V
Current - Continuous Drain(Id)1.3A;9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation94W
RDS(on)535mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)531pF

Technical details

600V 4V 94W 535mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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