PANJIT PJD55N03_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD55N03_L2_00001

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)7.1nC@4.5V
Current - Continuous Drain(Id)10.5A;55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.62V
Pd - Power Dissipation2W;54W
Reverse Transfer Capacitance (Crss@Vds)81pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)763pF

Technical details

30V 1.62V 9mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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