PANJIT PJD4NA90_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD4NA90_L2_00001

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)17nC@10V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation90W
RDS(on)3.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)710pF

Technical details

900V 4A 4V 90W 3.4Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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