PANJIT · FETs & Power MOSFETs · MPN PJD4NA65_R2_00001
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| Gate Charge(Qg) | 11.4nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| RDS(on) | 2.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 463pF |
650V 4A 4V 2.7Ω@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS