PANJIT PJD4NA60_R2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD4NA60_R2_00001

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)11.1nC@10V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
RDS(on)2.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)450pF

Technical details

600V 4A 4V 2.4Ω@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS

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