PANJIT PJD35P03_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD35P03_L2_00001

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Specifications

Gate Charge(Qg)11nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)8.4A;35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2W;35W
Reverse Transfer Capacitance (Crss@Vds)132pF
RDS(on)19mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.169nF

Technical details

30V 19mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS

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