PANJIT PJD18N20_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD18N20_L2_00001

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)24nC@10V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation83W
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.017nF

Technical details

200V 18A 3V 83W 160mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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