PANJIT PJD14P10A_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD14P10A_L2_00001

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Specifications

Gate Charge(Qg)40.7nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.5A;14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2W;60W
Reverse Transfer Capacitance (Crss@Vds)92pF
RDS(on)140mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.298nF

Technical details

100V 2V 140mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS

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