PANJIT PJD13N10A_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD13N10A_L2_00001

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.9A;13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W;41W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)115mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.413nF

Technical details

100V 2.5V 115mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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