PANJIT · FETs & Power MOSFETs · MPN PJD10N10_L2_00001
No reviews yet — be the first to review PANJIT PJD10N10_L2_00001.
| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2.6A;34.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 2W;34.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 130mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 707pF |
100V 3.5V 130mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS