PANJIT PJD100N04_L2_00001

PANJIT · FETs & Power MOSFETs · MPN PJD100N04_L2_00001

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Specifications

Gate Charge(Qg)50nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)17A;100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)246pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.214nF

Technical details

40V 2.5V 3.8mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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