PANJIT BSS8402DW_R1_00001

PANJIT · FETs & Power MOSFETs · MPN BSS8402DW_R1_00001

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)130mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)7Ω@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)50pF
TypeN-Channel + P-Channel

Technical details

60V 130mA 2.5V 200mW 7Ω@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-363 Single FETs, MOSFETs RoHS

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