PANJIT BC847AS-AU_R1_000A1

PANJIT · Transistors (BJTs) · MPN BC847AS-AU_R1_000A1

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Specifications

Current - Collector Cutoff15nA
DC Current Gain110
Collector - Emitter Voltage VCEO45V
Pd - Power Dissipation250mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)-
Vce Saturation(VCE(sat))300mV
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

110 45V 250mW NPN 100mA SOT-363 Bipolar Transistor Arrays RoHS

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