OSEN · FETs & Power MOSFETs · MPN TK11A65D
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 11A |
| Output Capacitance(Coss) | 160pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 540mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
| Type | N-Channel |
650V 11A 4V 45W 540mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS