OSEN STF11NM60ND

OSEN · FETs & Power MOSFETs · MPN STF11NM60ND

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)12.5pF
RDS(on)370mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

600V 10A 4V 25W 370mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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