OSEN · FETs & Power MOSFETs · MPN SIHG20N50C
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 62nC |
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 230mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.55nF |
| Type | N-Channel |
N-Channel 500V 20A 250W Through Hole TO-247S