OSEN OSPH8N65C

OSEN · FETs & Power MOSFETs · MPN OSPH8N65C

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)135pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation40W
RDS(on)1.1Ω@10V
Reverse Transfer Capacitance (Crss@Vds)35pF
Input Capacitance(Ciss)1.1nF

Technical details

650V 8A 40W Through Hole TO-262F

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