OSEN OSPH5N65C

OSEN · FETs & Power MOSFETs · MPN OSPH5N65C

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)5A
Output Capacitance(Coss)65pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
RDS(on)2.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)7.5pF
Number1 N-channel
Input Capacitance(Ciss)515pF

Technical details

650V 5A 35W Through Hole TO-262F

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