OSEN · FETs & Power MOSFETs · MPN OSPH12N65
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 205pF |
| Current - Continuous Drain(Id) | 12A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 155W |
| Reverse Transfer Capacitance (Crss@Vds) | 24.8pF |
| RDS(on) | 620mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.1nF |
650V 12A 155W Through Hole TO-262