OSEN OSP7N65

OSEN · FETs & Power MOSFETs · MPN OSP7N65

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage650V
Configuration-
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)7A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
RDS(on)1.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)45pF
Number1 N-channel
Input Capacitance(Ciss)1.69nF

Technical details

N-Channel 650V 7A 100W Through Hole TO-220AB

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