OSEN OSP33N10

OSEN · FETs & Power MOSFETs · MPN OSP33N10

No reviews yet — be the first to review OSEN OSP33N10.

Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)33A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
RDS(on)30mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 N-channel
Input Capacitance(Ciss)1.38nF
TypeN-Channel

Technical details

N-Channel 100V 33A 130W Through Hole TO-220

Related FETs & Power MOSFETs