OSEN OSP18N20

OSEN · FETs & Power MOSFETs · MPN OSP18N20

No reviews yet — be the first to review OSEN OSP18N20.

Specifications

Drain to Source Voltage200V
Gate Charge(Qg)25nC@10V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)18A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
RDS(on)200mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 200V 18A 125W Through Hole TO-220

Related FETs & Power MOSFETs