OSEN · FETs & Power MOSFETs · MPN OSP160N10G
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.85nF |
| Current - Continuous Drain(Id) | 160A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 225W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.55nF |
| Type | N-Channel |
N-Channel 100V 160A 225W Through Hole TO-220AB