OSEN OSP12N65

OSEN · FETs & Power MOSFETs · MPN OSP12N65

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Specifications

Drain to Source Voltage650V
Configuration-
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)205pF
Current - Continuous Drain(Id)12A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation145W
Reverse Transfer Capacitance (Crss@Vds)24.8pF
RDS(on)620mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.1nF

Technical details

N-Channel 650V 12A 145W Through Hole TO-220AB

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