OSEN OSP10N60

OSEN · FETs & Power MOSFETs · MPN OSP10N60

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)57nC@10V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)680mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.04nF
TypeN-Channel

Technical details

N-Channel 600V 10A 140W Through Hole TO-220AB

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